MMUN2130LT1G

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MMUN2130LT1G概述

双极晶体管 - 预偏置 100mA 50V BRT PNP

Digital Transistors BRT

R1 = 1 kΩ, R2 = 1 kΩ

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MMUN2130LT1G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 246 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 3 @5mA, 10V

最大电流放大倍数hFE 3

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 400 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

长度 2.9 mm

宽度 1.3 mm

高度 0.94 mm

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MMUN2130LT1G
型号: MMUN2130LT1G
描述:双极晶体管 - 预偏置 100mA 50V BRT PNP
替代型号MMUN2130LT1G
型号/品牌 代替类型 替代型号对比

MMUN2130LT1G

ON Semiconductor 安森美

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当前型号

MMUN2130LT1

安森美

完全替代

MMUN2130LT1G和MMUN2130LT1的区别

MMUN2130LT3

安森美

功能相似

MMUN2130LT1G和MMUN2130LT3的区别

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