偏置电阻晶体管 Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
− Machine Model: Class B
• The SC−59 Package Can be Soldered Using Wave or Reflow
• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die
• Pb−Free Packages are Available
无卤素状态 Halogen Free
极性 PNP
耗散功率 230 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 120 @5mA, 10V
最大电流放大倍数hFE 120
额定功率Max 230 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 338 mW
安装方式 Surface Mount
引脚数 3
封装 SC-59-3
长度 2.9 mm
宽度 1.5 mm
高度 1.09 mm
封装 SC-59-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN2140T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
RN2202 东芝 | 类似代替 | MUN2140T1G和RN2202的区别 |
BCW32LT1G 安森美 | 功能相似 | MUN2140T1G和BCW32LT1G的区别 |
MUN5137DW1T1G 安森美 | 功能相似 | MUN2140T1G和MUN5137DW1T1G的区别 |