MUN2140T1G

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MUN2140T1G概述

偏置电阻晶体管 Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: Class 1

   − Machine Model: Class B

• The SC−59 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

MUN2140T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 230 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 120 @5mA, 10V

最大电流放大倍数hFE 120

额定功率Max 230 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 338 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-59-3

外形尺寸

长度 2.9 mm

宽度 1.5 mm

高度 1.09 mm

封装 SC-59-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN2140T1G
型号: MUN2140T1G
描述:偏置电阻晶体管 Bias Resistor Transistors
替代型号MUN2140T1G
型号/品牌 代替类型 替代型号对比

MUN2140T1G

ON Semiconductor 安森美

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