MCR08BT1 闸流晶体管, 0.5A额定, 200V峰值, 200μA 0.8V触发, 4针 SOT-223封装
反向重复峰值电压VRRM/断态重复峰值电压VDRMRepetitive peak reverse voltage/Repetitive peak off-state voltage| 200V \---|--- 通态平均电流ITAVAverage on-state current| 通态最大电流ITRMSRMS on-state current| 0.8A 栅极触发电压VGTGate trigger voltage | 0.8V 栅极触发电流IGTGate trigger current| 200μA 保持电流IHHolding current | 5mA 峰值通态电压VTMOn-state voltage| 1.7V 重复峰值断态电流IDRMRepetitive peak off-state current | 10μA 浪涌电流ITSM50Hz、60HzCurrent - Non Rep. Surge 50, 60Hz Itsm| 8A Description & Applications| Sensitive Gate Silicon Controlled Rectifiers Sensitive Gate Trigger Current Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Pb−Free Packages are Available 描述与应用| 敏感栅 可控硅整流器 敏感的门触发电流 阻断电压为600 V 玻璃表面钝化的可靠性和一致性 表面贴装封装 提供无铅封装
型号/品牌 | 代替类型 | 替代型号对比 |
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MCR08BT1 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MCR08BT1G 安森美 | 完全替代 | MCR08BT1和MCR08BT1G的区别 |
S4X8TSRP 力特 | 功能相似 | MCR08BT1和S4X8TSRP的区别 |