ON SEMICONDUCTOR MPSA42RL1G 单晶体管 双极, NPN, 300 V, 50 MHz, 625 mW, 50 mA, 25 hFE
Thanks to , your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
频率 50 MHz
额定电压DC 300 V
额定电流 500 mA
针脚数 3
极性 NPN
耗散功率 625 mW
增益频宽积 50 MHz
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 40 @30mA, 10V
额定功率Max 625 mW
直流电流增益hFE 25
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA42RL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
KSP42TA 飞兆/仙童 | 完全替代 | MPSA42RL1G和KSP42TA的区别 |
MMBTA42LT1G 安森美 | 类似代替 | MPSA42RL1G和MMBTA42LT1G的区别 |
MPSA42RLRAG 安森美 | 类似代替 | MPSA42RL1G和MPSA42RLRAG的区别 |