通用晶体管 General Purpose Transistors
Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 300 MHz
额定电压DC 40.0 V
额定电流 600 mA
极性 N-Channel, NPN
耗散功率 625 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPS2222ARLRPG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPS2222AG 安森美 | 类似代替 | MPS2222ARLRPG和MPS2222AG的区别 |
MPS2222ARLRAG 安森美 | 类似代替 | MPS2222ARLRPG和MPS2222ARLRAG的区别 |
MPS2222ARLRM 安森美 | 类似代替 | MPS2222ARLRPG和MPS2222ARLRM的区别 |