MMBTA14LT1HTSA1

MMBTA14LT1HTSA1图片1
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MMBTA14LT1HTSA1概述

SOT-23 NPN 30V 0.3A

If you require a higher current gain value in your circuit, then the NPN Darlington transistor, developed by Technologies, is for you. This product"s maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2@0.1mA@100mA V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

MMBTA14LT1HTSA1中文资料参数规格
技术参数

额定电压DC 30.0 V

额定电流 300 mA

极性 NPN

耗散功率 330 mW

击穿电压集电极-发射极 30 V

集电极最大允许电流 0.3A

最小电流放大倍数hFE 20000 @100mA, 5V

额定功率Max 330 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 125MHz Min

耗散功率Max 330 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Discontinued at Digi-Key

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MMBTA14LT1HTSA1
型号: MMBTA14LT1HTSA1
描述:SOT-23 NPN 30V 0.3A
替代型号MMBTA14LT1HTSA1
型号/品牌 代替类型 替代型号对比

MMBTA14LT1HTSA1

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