MBR160G

ON SEMICONDUCTOR  MBR160G.  肖特基整流器

The is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

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Low-reverse current

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Low stored charge, majority carrier conduction

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Low-power loss/high-efficiency

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Highly stable oxide-passivated junction

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All external surfaces corrosion-resistant