0.35A,30V,N/P沟道MOSFET
双 N/P 通道 MOSFET,
得捷:
MOSFET N/P-CH 30V MCPH6
欧时:
### 双 N/P 通道 MOSFET,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
贸泽:
MOSFET PCH+NCH 2.5V DRIVE SERIES
艾睿:
This MCH6613-TL-E power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MCH6613-TL-E Dual N/P-channel MOSFET Transistor, 0.2 A, 0.35 A, 30 V, 6-Pin MCPH
安富利:
Trans MOSFET N/P-CH 30V 0.35A/0.2A 6-Pin MCPH T/R
Verical:
Trans MOSFET N/P-CH Si 30V 0.35A/0.2A 6-Pin MCPH T/R
力源芯城:
0.35A,30V,N/P沟道MOSFET
Win Source:
MOSFET N/P-CH 30V MCPH6
通道数 2
漏源极电阻 3.7 Ω
极性 N-Channel, P-Channel
耗散功率 800 mW
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 0.35A/0.2A
上升时间 65 nS
输入电容Ciss 7pF @10VVds
额定功率Max 800 mW
下降时间 120 nS
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 800 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363-6
长度 2 mm
宽度 1.6 mm
高度 0.85 mm
封装 SOT-363-6
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
香港进出口证 NLR