ON SEMICONDUCTOR MPSW51AG 射频双极晶体管
has the solution to your circuit"s high-voltage requirements with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
频率 50 MHz
额定电压DC -40.0 V
额定电流 -1.00 A
针脚数 3
极性 PNP, P-Channel
耗散功率 1 W
击穿电压集电极-发射极 40 V
热阻 50℃/W RθJC
集电极最大允许电流 1A
最小电流放大倍数hFE 60 @100mA, 1V
额定功率Max 1 W
直流电流增益hFE 50
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
长度 5.21 mm
高度 7.87 mm
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Box
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSW51AG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSW51ARLRPG 安森美 | 完全替代 | MPSW51AG和MPSW51ARLRPG的区别 |
MPSW51ARLRAG 安森美 | 类似代替 | MPSW51AG和MPSW51ARLRAG的区别 |
MPSW51A 安森美 | 类似代替 | MPSW51AG和MPSW51A的区别 |