放大器晶体管 Amplifier Transistors
brings you the solution to your high-voltage BJT needs with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
频率 50 MHz
额定电压DC -80.0 V
额定电流 -500 mA
极性 PNP
耗散功率 0.625 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA56ZL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSA56RLRP 安森美 | 完全替代 | MPSA56ZL1G和MPSA56RLRP的区别 |
MPSA56RLRAG 安森美 | 类似代替 | MPSA56ZL1G和MPSA56RLRAG的区别 |
MPSA56G 安森美 | 类似代替 | MPSA56ZL1G和MPSA56G的区别 |