MBR1100G

ON SEMICONDUCTOR  MBR1100G  肖特基整流器, 单, 100 V, 1 A, DO-41, 2 引脚, 790 mV 新

The is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

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Cathode indicated by polarity band

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Low reverse current

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Low stored charge, majority carrier conduction

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Low power loss/high efficiency

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Highly stable oxide passivated junction

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Guard-ring for stress protection

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Low forward voltage

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High surge capacity

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All external surfaces corrosion-resistant