








N 通道功率 MOSFET,30V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
N 通道功率 MOSFET,30V,
### MOSFET ,ON Semiconductor
立创商城:
N沟道 30V 1.8A
得捷:
MOSFET N-CH 30V 1.8A SC70
欧时:
ON Semiconductor Si N沟道 MOSFET MCH3475-TL-E, 1.8 A, Vds=30 V, 3引脚 MCHP封装
贸泽:
MOSFET LOW-NOISE AMPLIFIER
e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 1.8 A, 0.135 ohm, SOT-323, 表面安装
艾睿:
Compared to traditional transistors, MCH3475-TL-E power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
MCH3475-TL-E N-channel MOSFET Transistor, 1.8 A, 30 V, 3-Pin MCHP
安富利:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R
Chip1Stop:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R
Verical:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R
力源芯城:
1.8A,30V,N沟道MOSFET
DeviceMart:
MOSFET N-CH 30V 1.8A MCPH3
Win Source:
MOSFET N-CH 30V 1.8A MCPH3
通道数 1
针脚数 3
漏源极电阻 0.135 Ω
极性 N-Channel
耗散功率 800 mW
阈值电压 2.6 V
漏源极电压Vds 30 V
连续漏极电流Ids 1.80 A
上升时间 3.6 ns
输入电容Ciss 88pF @10VVds
额定功率Max 800 mW
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 800mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2 mm
宽度 1.6 mm
高度 0.85 mm
封装 SOT-323-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99