放大器晶体管 Amplifier Transistors
The NPN general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 75 MHz
额定电压DC 40.0 V
额定电流 2.00 A
极性 NPN
耗散功率 0.625 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 2A
最小电流放大倍数hFE 75 @1A, 2V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
高度 5.33 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPS650RLRAG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPS650RLRA 安森美 | 完全替代 | MPS650RLRAG和MPS650RLRA的区别 |
MPS650G 安森美 | 类似代替 | MPS650RLRAG和MPS650G的区别 |
MPS650ZL1G 安森美 | 类似代替 | MPS650RLRAG和MPS650ZL1G的区别 |