MCH6544-TL-E 编带
- 双极 BJT - 阵列 2 NPN(双) 50V 500mA 500MHz 550mW 表面贴装型 6-MCPH
立创商城:
MCH6544-TL-E
得捷:
TRANS 2NPN 50V 0.5A 6MCPH
贸泽:
双极晶体管 - 双极结型晶体管BJT 2.5/3.3V 4:1 DIFF MUX
艾睿:
Use this versatile NPN MCH6544-TL-E GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 550 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 50V 0.5A 6-Pin MCPH T/R
Verical:
Trans GP BJT NPN 50V 0.5A 550mW 6-Pin MCPH T/R
频率 500 MHz
极性 N-Channel, NPN
耗散功率 550 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 800 @10mA, 2V
最大电流放大倍数hFE 800
额定功率Max 550 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 550 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363-6
封装 SOT-363-6
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MCH6544-TL-E ON Semiconductor 安森美 | 当前型号 | 当前型号 |
FMB200 安森美 | 功能相似 | MCH6544-TL-E和FMB200的区别 |