STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
高电压,STMicroelectronics
得捷:
TRANS NPN 250V 1A DPAK
欧时:
STMicroelectronics MJD47T4 , NPN 晶体管, 1 A, Vce=250 V, HFE:10, 10 MHz, 3引脚 DPAK TO-252封装
贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Hi-Volt Fast Sw
e络盟:
双极晶体管
艾睿:
This specially engineered NPN MJD47T4 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 250V 1A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans GP BJT NPN 250V 1A 3-Pin2+Tab DPAK T/R
Verical:
Trans GP BJT NPN 250V 1A 15000mW 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS MJD47T4 Bipolar BJT Single Transistor, NPN, 250 V, 10 MHz, 15 W, 1 A, 150 hFE
Win Source:
TRANS NPN 250V 1A DPAK
频率 10 MHz
额定电压DC 250 V
额定电流 1.00 A
针脚数 3
极性 NPN
耗散功率 15 W
击穿电压集电极-发射极 250 V
最小电流放大倍数hFE 30 @300mA, 10V
最大电流放大倍数hFE 150
额定功率Max 15 W
直流电流增益hFE 150
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 15000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD47T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MJD340T4 意法半导体 | 类似代替 | MJD47T4和MJD340T4的区别 |
MJD47T4G 安森美 | 功能相似 | MJD47T4和MJD47T4G的区别 |
MJD340TF 飞兆/仙童 | 功能相似 | MJD47T4和MJD340TF的区别 |