MBR8H100MFST1G

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MBR8H100MFST1G概述

MBR8H100MFS: 8 A,100 V 肖特基二极管,SO-8FL 封装

Diode Schottky 100V 8A Surface Mount 5-DFN 5x6 8-SOFL


立创商城:
MBR8H100MFST1G


得捷:
DIODE SCHOTTKY 100V 8A 5DFN


艾睿:
Converting from AC to DC is simple when using a Schottky diode MBR8H100MFST1G rectifier from ON Semiconductor. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. Its peak non-repetitive surge current is 75 A, while its maximum continuous forward current is 8 A. It is made in a single triple anode dual cathode configuration. This rectifier has a minimum operating temperature of -55 °C and a maximum of 175 °C.


安富利:
Diode Schottky 100V 8A 4-Pin DFN T/R


Verical:
Rectifier Diode Schottky 100V 8A 5-Pin4+Tab SO-FL T/R


MBR8H100MFST1G中文资料参数规格
技术参数

正向电压 900mV @8A

正向电流 8000 mA

正向电流Max 8000 mA

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 5

封装 DFN-8

外形尺寸

封装 DFN-8

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买MBR8H100MFST1G
型号: MBR8H100MFST1G
描述:MBR8H100MFS: 8 A,100 V 肖特基二极管,SO-8FL 封装
替代型号MBR8H100MFST1G
型号/品牌 代替类型 替代型号对比

MBR8H100MFST1G

ON Semiconductor 安森美

当前型号

当前型号

MBR8H100MFST3G

安森美

完全替代

MBR8H100MFST1G和MBR8H100MFST3G的区别

NRVB8H100MFST1G

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类似代替

MBR8H100MFST1G和NRVB8H100MFST1G的区别

NRVB8H100MFST3G

安森美

类似代替

MBR8H100MFST1G和NRVB8H100MFST3G的区别

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