MJE3055TTU

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MJE3055TTU概述

FAIRCHILD SEMICONDUCTOR  MJE3055TTU  单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 10 A, 5 hFE

The is a NPN Silicon Transistor offers 70V collector base voltage and 10A collector current. It is suitable for general purpose and switching applications.

.
DC current gain specified to IC = 10A
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2MHz Minimum high current gain-bandwidth product fT

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Sil Transistor


艾睿:
Trans GP BJT NPN 60V 10A 3-Pin3+Tab TO-220 Rail


富昌:
NPN 75 W 60 V 10 A 法兰安装 外延硅 晶体管 - TO-220-3


Chip1Stop:
Trans GP BJT NPN 60V 10A 3-Pin3+Tab TO-220 Rail


Verical:
Trans GP BJT NPN 60V 10A 3-Pin3+Tab TO-220 Rail


Newark:
# FAIRCHILD SEMICONDUCTOR  MJE3055TTU  Bipolar BJT Single Transistor, NPN, 60 V, 2 MHz, 75 W, 10 A, 5 hFE


Win Source:
TRANS NPN 60V 10A TO-220


MJE3055TTU中文资料参数规格
技术参数

频率 2 MHz

额定电压DC 60.0 V

额定电流 10.0 A

针脚数 3

极性 NPN

耗散功率 75 W

击穿电压集电极-发射极 60 V

集电极最大允许电流 10A

最小电流放大倍数hFE 20 @4A, 4V

最大电流放大倍数hFE 100

额定功率Max 600 mW

直流电流增益hFE 5

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 75 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 9.9 mm

宽度 4.5 mm

高度 9.4 mm

封装 TO-220-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE3055TTU
型号: MJE3055TTU
制造商: Fairchild 飞兆/仙童
描述:FAIRCHILD SEMICONDUCTOR  MJE3055TTU  单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 10 A, 5 hFE
替代型号MJE3055TTU
型号/品牌 代替类型 替代型号对比

MJE3055TTU

Fairchild 飞兆/仙童

当前型号

当前型号

MJE2955TTU

飞兆/仙童

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