ON SEMICONDUCTOR MC33172DG 运算放大器, 双路, 1.8 MHz, 2个放大器, 2.1 V/µs, ± 1.5V 至 ± 22V, SOIC, 8 引脚
MC33171/2/4,MCV33172,低功率,单电源 3 V 至 44 V,,
MC33171(单路),MC33172(双路),MC33174(四路)
低电源电流:每个放大器 180 μA
宽带宽:1.8 MHz
高转换速率:2.1 V/μs
低输入偏置电压:2 mV
NCV33172 适用于汽车应用;符合 AEC-Q100
得捷:
IC OPAMP GP 2 CIRCUIT 8SOIC
立创商城:
MC33172DG
欧时:
### MC33171/2/4,MCV33172,低功率,单电源 3 V 至 44 V,运算放大器,ON SemiconductorMC33171(单路),MC33172(双路),MC33174(四路) 低电源电流:每个放大器 180 μA 宽带宽:1.8 MHz 高转换速率:2.1 V/μs 低输入偏置电压:2 mV NCV33172 适用于汽车应用;符合 AEC-Q100 ### 运算放大器,ON Semiconductor
艾睿:
Op Amp Dual Low Power Amplifier ±22V/44V 8-Pin SOIC N Rail
Allied Electronics:
MC33172DG, Dual Op Amp, 1.8MHz, 5 - 28 V, 8-Pin SOIC
安富利:
OP Amp Dual GP ±22V/44V 8-Pin SOIC N Rail
Chip1Stop:
OP Amp Dual GP ±22V/44V 8-Pin SOIC N Rail
TME:
Operational amplifier; 1.8MHz; 3÷44V; Channels:2; SO8
Verical:
Op Amp Dual Low Power Amplifier ±22V/44V 8-Pin SOIC N Rail
Newark:
The MC33172DG is a quality bi-polar monolithic single-supply low power Operational Amplifier operates at 180A per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/s slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common mode input voltage includes ground potential VEE. With a Darlington input stage this device exhibit high input resistance and low input offset voltage and high gain. The all NPN output stage characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability and excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
力源芯城:
低功耗
DeviceMart:
IC OPAMP DUAL LOW POWER 8-SOIC
电源电压DC 15.0 V
工作电压 3V ~ 44V
无卤素状态 Halogen Free
输出电流 5 mA
供电电流 220 µA
电路数 2
通道数 2
针脚数 8
共模抑制比 90 dB
带宽 1.8 MHz
转换速率 2.10 V/μs
增益频宽积 1.8 MHz
输入补偿电压 2 mV
输入偏置电流 20 nA
工作温度Max 85 ℃
工作温度Min -40 ℃
增益带宽 1.8 MHz
共模抑制比Min 80 dB
电源电压 3V ~ 44V
电源电压Max 44 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, 车用, Automotive
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MC33172DG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MC33172DR2G 安森美 | 完全替代 | MC33172DG和MC33172DR2G的区别 |
MC33172DR2 安森美 | 完全替代 | MC33172DG和MC33172DR2的区别 |
MC33172VDR2G 安森美 | 类似代替 | MC33172DG和MC33172VDR2G的区别 |