互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
Features
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VCEOsus = 100 Vdc Min , MJE253
hFE = 40-200
hFE = 40-120 - MJE243, MJE253
VCEsat = 0.3 Vdc Max @ IC = 500 mAdc
fT = 40 MHz Min @ IC = 100 mAdc
ICBO = 100 nAdc Max @ Rated VCB
额定电压DC 100 V
额定电流 4.00 A
极性 N-Channel
耗散功率 15 W
增益频宽积 40 MHz
击穿电压集电极-发射极 100 V
集电极最大允许电流 4A
最小电流放大倍数hFE 40
最大电流放大倍数hFE 180
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 15000 mW
安装方式 Through Hole
引脚数 3
封装 TO-225-3
长度 7.74 mm
宽度 2.66 mm
高度 11.04 mm
封装 TO-225-3
材质 Silicon
产品生命周期 Unknown
包装方式 Bulk
最小包装 500
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJE243 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJE243G 安森美 | 类似代替 | MJE243和MJE243G的区别 |
BD237 意法半导体 | 功能相似 | MJE243和BD237的区别 |