MJE243

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MJE243概述

互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

Features

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High Collector-Emitter Sustaining Voltage -

VCEOsus = 100 Vdc Min , MJE253

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High DC Current Gain @ IC = 200 mAdc

hFE = 40-200

hFE = 40-120 - MJE243, MJE253

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Low Collector-Emitter Saturation Voltage -

VCEsat = 0.3 Vdc Max @ IC = 500 mAdc

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High Current Gain Bandwidth Product -

fT = 40 MHz Min @ IC = 100 mAdc

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Annular Construction for Low Leakages

ICBO = 100 nAdc Max @ Rated VCB

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Pb-Free Packages are Available
MJE243中文资料参数规格
技术参数

额定电压DC 100 V

额定电流 4.00 A

极性 N-Channel

耗散功率 15 W

增益频宽积 40 MHz

击穿电压集电极-发射极 100 V

集电极最大允许电流 4A

最小电流放大倍数hFE 40

最大电流放大倍数hFE 180

工作温度Max 150 ℃

工作温度Min 65 ℃

耗散功率Max 15000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-225-3

外形尺寸

长度 7.74 mm

宽度 2.66 mm

高度 11.04 mm

封装 TO-225-3

物理参数

材质 Silicon

其他

产品生命周期 Unknown

包装方式 Bulk

最小包装 500

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE243
型号: MJE243
制造商: ON Semiconductor 安森美
描述:互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
替代型号MJE243
型号/品牌 代替类型 替代型号对比

MJE243

ON Semiconductor 安森美

当前型号

当前型号

MJE243G

安森美

类似代替

MJE243和MJE243G的区别

BD237

意法半导体

功能相似

MJE243和BD237的区别

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