MJD31C 系列 NPN 100 V 3A 表面贴装 低电压 功率晶体管 - TO-252
- 双极 BJT - 单 NPN 100 V 3 A - 15 W 表面贴装型 DPAK
得捷:
TRANS NPN 100V 3A DPAK
立创商城:
NPN 100V 3A
e络盟:
单晶体管 双极, NPN, 100 V, 15 W, 3 A, 10 hFE
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MJD31CT4-A GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 100V 3A 3-Pin2+Tab TO-252 T/R
富昌:
MJD31CT4-A Series 100 V 3 A 15 W NPN Low Voltage Power Transistor - TO-252-3
Chip1Stop:
Trans GP BJT NPN 100V 3A Automotive 3-Pin2+Tab TO-252 T/R
Verical:
Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS MJD31CT4-A Bipolar BJT Single Transistor, NPN, 100 V, 15 W, 3 A, 50 hFE
DeviceMart:
TRANSISTOR NPN 100V 3A DPAK
针脚数 3
极性 NPN
耗散功率 15 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 3A
最小电流放大倍数hFE 10 @3A, 4V
最大电流放大倍数hFE 25
额定功率Max 15 W
直流电流增益hFE 50
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 15000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
宽度 6.2 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD31CT4-A ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MJD31C 意法半导体 | 完全替代 | MJD31CT4-A和MJD31C的区别 |
MJD31CT4 意法半导体 | 类似代替 | MJD31CT4-A和MJD31CT4的区别 |
MJD31CT4G 安森美 | 功能相似 | MJD31CT4-A和MJD31CT4G的区别 |