互补达林顿功率晶体管 Complementary Darlington Power Transistor
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 Typ @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
额定电压DC 100 V
额定电流 8.00 A
极性 NPN
耗散功率 20 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 8A
最小电流放大倍数hFE 1000
最大电流放大倍数hFE 12000
工作温度Max 150 ℃
工作温度Min -65 ℃
安装方式 Surface Mount
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
产品生命周期 Obsolete
包装方式 Tube
最小包装 2500
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD122 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD122T4G 安森美 | 类似代替 | MJD122和MJD122T4G的区别 |
MJD122G 安森美 | 类似代替 | MJD122和MJD122G的区别 |
NJVMJD122T4G 安森美 | 类似代替 | MJD122和NJVMJD122T4G的区别 |