MJD122-1

互补功率达林顿晶体管 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

Description

The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127.

Features

■ Low base drive requirements

■ Integrated antiparallel collector-emitter diode

■ Through hole TO-251 IPAK power package in tube suffix “-1”

■ Surface mounting TO-252 DPAK power package in tape & reel suffix “T4” Applications

■ General purpose switching and amplifier

得捷:
TRANS NPN DARL 100V 8A TO251

贸泽:
Darlington Transistors NPN PWR Darlington Int Anti Collector

艾睿:
Trans Darlington NPN 100V 5A 1750mW 3-Pin3+Tab IPAK Tube

安富利:
Trans Darlington NPN 100V 5A 3-Pin3+Tab TO-251 Tube

Chip1Stop:
Trans Darlington NPN 100V 5A 1750mW 3-Pin3+Tab TO-251 Tube

Verical:
Trans Darlington NPN 100V 8A 1750mW 3-Pin3+Tab IPAK Tube