MJD32CT4-A

MJD32C 系列 100 V 3 A 表面贴装 PNP 低压 功率晶体管 - TO-252-3

- 双极 BJT - 单 PNP - 表面贴装型 DPAK

立创商城:
汽车级低压PNP功率晶体管

得捷:
TRANS PNP 100V 3A DPAK

e络盟:
单晶体管 双极, PNP, -100 V, 15 W, -3 A, 10 hFE

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MJD32CT4-A general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT PNP 100V 3A 3-Pin2+Tab TO-252 T/R

Chip1Stop:
Trans GP BJT PNP 100V 3A 15000mW Automotive 3-Pin2+Tab TO-252 T/R

Verical:
Trans GP BJT PNP 100V 3A 15000mW Automotive 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  MJD32CT4-A  Bipolar BJT Single Transistor, PNP, -100 V, 15 W, -3 A, 50 hFE

DeviceMart:
TRANSISTOR PNP 100V 3A DPAK