MJD117RLG

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MJD117RLG概述

DPAK PNP 100V 2A

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 NPN and MJD117 PNP are complementary devices.

Features

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Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
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Straight Lead Version in Plastic Sleeves "1" Suffix
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Lead Formed Version in 16 mm Tape and Reel "T4" Suffix
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Surface Mount Replacements for TIP110-TIP117 Series
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Monolithic Construction With Built-in Base-Emitter Shunt Resistors
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High DC Current Gain hFE = 2500 Typ @ IC = 2.0 Adc
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Complementary Pairs Simplifies Designs
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NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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PbFree Packages are Available
MJD117RLG中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 1750 mW

击穿电压集电极-发射极 100 V

集电极最大允许电流 2A

最小电流放大倍数hFE 1000 @2A, 3V

额定功率Max 1.75 W

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 25MHz Min

耗散功率Max 1750 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.73 mm

宽度 6.22 mm

高度 2.38 mm

封装 TO-252-3

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MJD117RLG
型号: MJD117RLG
描述:DPAK PNP 100V 2A
替代型号MJD117RLG
型号/品牌 代替类型 替代型号对比

MJD117RLG

ON Semiconductor 安森美

当前型号

当前型号

MJD117T4

安森美

完全替代

MJD117RLG和MJD117T4的区别

NJVMJD117T4G

安森美

类似代替

MJD117RLG和NJVMJD117T4G的区别

MJD117

安森美

类似代替

MJD117RLG和MJD117的区别

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