MJD44H11T4-A

互补功率晶体管 Complementary power transistors

- 双极 BJT - 单 NPN - 表面贴装型 DPAK

得捷:
TRANS NPN 80V 8A DPAK

艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, STMicroelectronics&s; NPN MJD44H11T4-A general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 80V 8A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin2+Tab DPAK T/R

Verical:
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin2+Tab DPAK T/R

DeviceMart:
TRANS NPN 80V 8A DPAK