2A,-20V,P沟道功率双MOSFET
Power MOSFET 2 Amps, 20 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDSon and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSdevices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features
•Ultra Low RDSonProvides Higher Efficiency and Extends Battery Life
•Logic Level Gate Drive − Can Be Driven by Logic ICs
•Miniature SO−8 Surface Mount Package − Saves Board Space
•Diode Is Characterized for Use In Bridge Circuits
•Diode Exhibits High Speed, With Soft Recovery
•IDSSSpecified at Elevated Temperature
•Avalanche Energy Specified
•Mounting Information for SO−8 Package Provided
•Pb−Free Package is Available
额定电压DC -20.0 V
额定电流 -2.00 A
漏源极电阻 160 mΩ
极性 Dual P-Channel
耗散功率 2 W
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 3.30 A
输入电容Ciss 588pF @16VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMDF2P02HDR2G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMDF2P02HDR2 安森美 | 类似代替 | MMDF2P02HDR2G和MMDF2P02HDR2的区别 |
SI4943BDY-T1-E3 威世 | 功能相似 | MMDF2P02HDR2G和SI4943BDY-T1-E3的区别 |
MMDF2P02HD 安森美 | 功能相似 | MMDF2P02HDR2G和MMDF2P02HD的区别 |