MLD1N06CLT4G

SMARTDISCRETES TM MOSFET 1安培， 62伏特，逻辑电平N沟道DPAK SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK

Transistor General Purpose NPN, N-Channel Gate-Drain, Source Clamp 65V 1A Surface Mount DPAK

得捷:
IC MOSFET POWER N-CH 1A 65V DPAK

贸泽:
MOSFET 62V 1A N-Channel

艾睿:
Create an effective common drain amplifier using this MLD1N06CLT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 40000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 59V 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 59V 3-Pin 2+Tab DPAK T/R

Win Source:
IC MOSFET POWER N-CH 1A 65V DPAK