







-12A,-100V,P沟道功率MOSFET
This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features
•Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C
•Designer’s Data − IDSS, VDSon, VGSthand SOA Specified at Elevated Temperature
•Rugged − SOA is Power Dissipation Limited
•Source−to−Drain Diode Characterized for Use With Inductive Loads
•Pb−Free Package is Available额定电压DC -100 V
额定电流 -12.0 A
漏源极电阻 300 mΩ
极性 P-Channel
耗散功率 75W Tc
输入电容 920 pF
栅电荷 50.0 nC
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 12.0 A
输入电容Ciss 920pF @25VVds
额定功率Max 75 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 75W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MTP12P10G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MTP12P10 安森美 | 功能相似 | MTP12P10G和MTP12P10的区别 |
RFP12P10 英特矽尔 | 功能相似 | MTP12P10G和RFP12P10的区别 |