MTB30P06V

MTB30P06V概述

功率MOSFET 30安培, 60伏P沟道D2PAK Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK

**30 AMPERES, 60 VOLTS ****R****DSon ****= 80 m**Ω

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

**Features**

Avalanche Energy Specified

IDSS and VDSon Specified at Elevated Temperature

Pb−Free Packages are Available

MTB30P06V中文资料参数规格
技术参数

极性 P-CH

漏源极电压Vds 60 V

连续漏极电流Ids 30A

封装参数

封装 D2PAK

外形尺寸

封装 D2PAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买MTB30P06V
型号: MTB30P06V
制造商: ON Semiconductor 安森美
描述:功率MOSFET 30安培, 60伏P沟道D2PAK Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK
替代型号MTB30P06V
型号/品牌 代替类型 替代型号对比

MTB30P06V

ON Semiconductor 安森美

当前型号

当前型号

MTB30P06VT4G

安森美

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MTB30P06V和MTB30P06VT4G的区别

SPD30P06P

英飞凌

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MTB30P06V和SPD30P06P的区别

SPU30P06P

英飞凌

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MTB30P06V和SPU30P06P的区别

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