MTB2P50ET4G

-2A,-500V,P沟道功率MOSFET

Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Features

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

   Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDSon Specified at Elevated Temperature

• Short Heatsink Tab Manufactured — Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Pb−Free Package is Available