MJL21195

硅功率晶体管 Silicon Power Transistors

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

The and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

•Total Harmonic Distortion Characterized

•High DC Current Gain −hFE= 25 Min @ IC= 8 Adc

•Excellent Gain Linearity

•High SOA: 2.50 A, 80 V, 1 Second

•Epoxy Meets UL 94, V−0 @ 0.125 in

•ESD Ratings: Human Body Model, 3B 8000 V

Machine Model, C 400 V

•Pb−Free Packages are Available

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