互补达林顿功率晶体管 Complementary Darlington Power Transistors
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS
NPN
MJD117 PNP
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
• Straight Lead Version in Plastic Sleeves “−1” Suffix
• Electrically Similar to Popular TIP31 and TIP32 Series
• Pb−Free Packages are Available
额定电压DC 100 V
额定电流 2.00 A
极性 N-Channel
耗散功率 1750 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 1000
最大电流放大倍数hFE 12000
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 25MHz Min
耗散功率Max 1750 mW
安装方式 Surface Mount
引脚数 3
封装 DPAK-3
封装 DPAK-3
产品生命周期 Unknown
包装方式 Tube
最小包装 2500
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJD112 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD112T4G 安森美 | 类似代替 | MJD112和MJD112T4G的区别 |
MJD112G 安森美 | 类似代替 | MJD112和MJD112G的区别 |
MJD112RLG 安森美 | 类似代替 | MJD112和MJD112RLG的区别 |