




15安培达林顿互补硅功率晶体管150〜250伏, 150瓦 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min All Types
• Collector−Emitter Sustaining Voltage
VCEOsus = 150 Vdc Min — MJH11018, 17
= 200 Vdc Min — MJH11020, 19
= 250 Vdc Min — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCEsat = 1.2 V Typ @ IC = 5.0 A
= 1.8 V Typ @ IC = 10 A
• Monolithic Construction
• Pb−Free Packages are Available额定电压DC -200 V
额定电流 -15.0 A
极性 PNP
耗散功率 150000 mW
击穿电压集电极-发射极 200 V
集电极最大允许电流 15A
最小电流放大倍数hFE 400 @10A, 5V
最大电流放大倍数hFE 15000
额定功率Max 150 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 150000 mW
安装方式 Through Hole
引脚数 3
封装 TO-218-3
封装 TO-218-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
最小包装 30
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJH11019 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJH11019G 安森美 | 类似代替 | MJH11019和MJH11019G的区别 |