互补功率晶体管DPAK对于表面贴装应用 Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955 PNP
NPN
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
• Straight Lead Version in Plastic Sleeves “−1” Suffix
• Electrically Similar to MJE2955 and MJE3055
• DC Current Gain Specified to 10 Amperes
• High Current Gain−Bandwidth Product − fT = 2.0 MHz Min @ IC= 500 mAdc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
• Pb−Free Packages are Available
额定电压DC 60.0 V
额定电流 10.0 A
极性 N-Channel
耗散功率 20 W
增益频宽积 2 MHz
击穿电压集电极-发射极 60 V
集电极最大允许电流 10A
最小电流放大倍数hFE 20
最大电流放大倍数hFE 100
额定功率Max 1.75 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 1750 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
最小包装 2500
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD3055 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD3055T4G 安森美 | 类似代替 | MJD3055和MJD3055T4G的区别 |
MJD3055G 安森美 | 类似代替 | MJD3055和MJD3055G的区别 |
MJD3055TF 安森美 | 类似代替 | MJD3055和MJD3055TF的区别 |