MMUN2232LT1

MMUN2232LT1图片1
MMUN2232LT1图片2
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MMUN2232LT1概述

MMUN2232LT1 带阻NPN三极管 50V 100mA/0.1A 4.7k 4.7k 增益15-30 SOT-23/SC-59 marking/标记 A8J ESD保护

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space and Component Count

•Pb−Free Packages are Available

MMUN2232LT1中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 NPN

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 15 @5mA, 10V

额定功率Max 246 mW

封装参数

安装方式 Surface Mount

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Unknown

包装方式 Cut Tape CT

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买MMUN2232LT1
型号: MMUN2232LT1
描述:MMUN2232LT1 带阻NPN三极管 50V 100mA/0.1A 4.7k 4.7k 增益15-30 SOT-23/SC-59 marking/标记 A8J ESD保护
替代型号MMUN2232LT1
型号/品牌 代替类型 替代型号对比

MMUN2232LT1

ON Semiconductor 安森美

当前型号

当前型号

MMUN2232LT1G

安森美

完全替代

MMUN2232LT1和MMUN2232LT1G的区别

FJN3301RTA

飞兆/仙童

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MMUN2232LT1和FJN3301RTA的区别

FJN3301RBU

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MMUN2232LT1和FJN3301RBU的区别

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