MMUN2112LT1 带阻尼PNP三极管 -50V -100mA/-0.1A 100 0.4W/400mW SOT-23/SC-59 标记A6B 开关电路,逆变器,接口电路,驱动电路
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space and Component Count
•Pb−Free Packages are Available
额定电压DC -50.0 V
额定电流 -100 mA
极性 PNP
耗散功率 400 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 60 @5mA, 10V
额定功率Max 246 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMUN2112LT1 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMUN2112LT1G 安森美 | 类似代替 | MMUN2112LT1和MMUN2112LT1G的区别 |
MMUN2112LT3 安森美 | 功能相似 | MMUN2112LT1和MMUN2112LT3的区别 |
FN1L3M-T1B 日本电气 | 功能相似 | MMUN2112LT1和FN1L3M-T1B的区别 |