功率MOSFET 30安培， 60伏P沟道D2PAK Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK
**30 AMPERES, 60 VOLTS ****R****DSon ****= 80 m**Ω
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
**Features**
Avalanche Energy Specified
IDSS and VDSon Specified at Elevated Temperature
Pb−Free Packages are Available
额定电压DC -60.0 V
额定电流 -30.0 A
漏源极电阻 80.0 mΩ
极性 P-Channel
耗散功率 3 W
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±15.0 V
连续漏极电流Ids 30.0 A
上升时间 25.9 ns
输入电容Ciss 2190pF @25VVds
额定功率Max 3 W
下降时间 52.4 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3W Ta, 125W Tc
安装方式 Surface Mount
封装 TO-263-3
长度 10.29 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MTB30P06VT4 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MTB30P06VT4G 安森美 | 类似代替 | MTB30P06VT4和MTB30P06VT4G的区别 |
IRFU5305PBF 英飞凌 | 功能相似 | MTB30P06VT4和IRFU5305PBF的区别 |
SPD30P06P 英飞凌 | 功能相似 | MTB30P06VT4和SPD30P06P的区别 |