



LITTELFUSE MG12150D-BA1MM IGBT Array & Module Transistor, Dual NPN, 210A, 1.8V, 1.1kW, 1.2kV, Module
IGBT 模块 - 半桥 底座安装 D3
得捷:
IGBT MODULE 1200V 210A 1100W D3
贸泽:
IGBT Modules 1200V 150A Dual
艾睿:
Trans IGBT Module N-CH 1.2KV 210A 7-Pin Package D Bulk
TME:
IGBT half-bridge; Urmax:1.2kV; Ic:150A; P:1.1kW; Ifsm:300A; screw
Newark:
# LITTELFUSE MG12150D-BA1MM IGBT Array & Module Transistor, Dual NPN, 210 A, 1.8 V, 1.1 kW, 1.2 kV, Module