高压晶体管 High Voltage Transistor
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
频率 300 MHz
极性 PNP
耗散功率 0.4 W
击穿电压集电极-发射极 150 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 60 @10mA, 5V
额定功率Max 400 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
封装 SC-70-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT5401WT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SMMBT5401LT1G 安森美 | 功能相似 | MMBT5401WT1G和SMMBT5401LT1G的区别 |
NSVMMBT5401LT3G 安森美 | 功能相似 | MMBT5401WT1G和NSVMMBT5401LT3G的区别 |
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