ON SEMICONDUCTOR MC34152DR2G MOSFET Driver, Non-Inverting, 6.1V-18V supply, SOIC-8 新
Switch between states in a high power transistor by using this power driver developed by . This device has a maximum propagation delay time of 55typ ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
电源电压DC 6.10V min
上升/下降时间 36ns, 32ns
无卤素状态 Halogen Free
输出接口数 2
针脚数 8
耗散功率 560 mW
上升时间 36 ns
输出电流Max 1.5 A
下降时间 32 ns
下降时间Max 32 ns
上升时间Max 36 ns
工作温度Max 70 ℃
工作温度Min 0 ℃
耗散功率Max 560 mW
电源电压 6.1V ~ 18V
电源电压Max 18 V
电源电压Min 6.1 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 0℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MC34152DR2G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MC33152DR2G 安森美 | 类似代替 | MC34152DR2G和MC33152DR2G的区别 |
MC33151DR2G 安森美 | 类似代替 | MC34152DR2G和MC33151DR2G的区别 |
MC34151DR2G 安森美 | 类似代替 | MC34152DR2G和MC34151DR2G的区别 |