ON SEMICONDUCTOR MC33153DR2G IGBT GATE DRIVER, LOW SIDE, SOIC-8 新
The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages.
Features
•High Current Output Stage: 1.0 A Source/2.0 A Sink
•Protection Circuits for Both Conventional and Sense IGBTs
•Programmable Fault Blanking Time
•Protection against Overcurrent and Short Circuit
•Undervoltage Lockout Optimized for IGBT’s
•Negative Gate Drive Capability
•Cost Effectively Drives Power MOSFETs and Bipolar Transistors
•Pb−Free Packages are Available
电源电压DC 0.00Vmin, 15.0Vmax
上升/下降时间 17 ns
无卤素状态 Halogen Free
输出接口数 1
针脚数 8
耗散功率 560 mW
工作温度Max 105 ℃
工作温度Min -40 ℃
电源电压 11.7V ~ 20V
电源电压Max 15 V
电源电压Min 0 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 105℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MC33153DR2G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MC33153DG 安森美 | 类似代替 | MC33153DR2G和MC33153DG的区别 |
MC33153D 安森美 | 类似代替 | MC33153DR2G和MC33153D的区别 |
MC33153DR2 安森美 | 类似代替 | MC33153DR2G和MC33153DR2的区别 |