MCP14E4 系列 4.0 A 18 Vmax 双 低压侧 非反相 MOSFET 驱动器 - SOIC-8
Use the power driver from Technology to turn on and off your high-power transistors! This device has a maximum propagation delay time of 60typ ns and a maximum power dissipation of 665 mW. Its maximum power dissipation is 665 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
电源电压DC 4.50V min
上升/下降时间 15ns, 18ns
输出接口数 2
耗散功率 665 mW
下降时间Max 30 ns
上升时间Max 30 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 665 mW
电源电压 4.5V ~ 18V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MCP14E4T-E/SN Microchip 微芯 | 当前型号 | 当前型号 |
MCP14E5-E/SN 微芯 | 完全替代 | MCP14E4T-E/SN和MCP14E5-E/SN的区别 |
MCP14E4-E/SN 微芯 | 完全替代 | MCP14E4T-E/SN和MCP14E4-E/SN的区别 |
MCP14E3-E/SN 微芯 | 完全替代 | MCP14E4T-E/SN和MCP14E3-E/SN的区别 |