低边 IGBT MOSFET 灌:9A 拉:9A
Correctly change the biasing voltage to a high power transistor by using this power driver by Technology. This device has a maximum propagation delay time of ±100 ns and a maximum power dissipation of 0.11 mW. Its maximum power dissipation is 0.11 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has an operating temperature range of -65 °C to 150 °C. This device has a minimum operating supply voltage of 42.2K V.
上升/下降时间 20ns, 24ns
输出接口数 1
输出电流 9 A
耗散功率 2 W
上升时间 20 ns
下降时间 24 ns
下降时间Max 75 ns
上升时间Max 75 ns
工作温度Max 70 ℃
工作温度Min 0 ℃
耗散功率Max 2000 mW
电源电压 4.5V ~ 18V
电源电压Max 18 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 5
封装 TO-220-5
封装 TO-220-5
工作温度 0℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MIC4421ZT Microchip 微芯 | 当前型号 | 当前型号 |
TC4421CAT 微芯 | 类似代替 | MIC4421ZT和TC4421CAT的区别 |
TC4421VAT 微芯 | 类似代替 | MIC4421ZT和TC4421VAT的区别 |
MIC4421CT 微芯 | 类似代替 | MIC4421ZT和MIC4421CT的区别 |