M29F200BB70N6T

M29F200BB70N6T图片1
M29F200BB70N6T图片2
M29F200BB70N6T概述

NOR Flash Parallel 5V 2Mbit 256K/128K x 8Bit/16Bit 70ns 48Pin TSOP T/R

* Single 5V±10% supply voltage for Program, Erase and Read operations * Access time: 45, 50, 70, 90ns * Programming time * 8µs per Byte/Word typical * 7 memory blocks * 1 Boot Block Top or Bottom location * 2 parameter and 4 main blocks * Program/Erase controller * Embedded Byte/Word Program algorithm * Embedded Multi-Block/Chip Erase algorithm * Status Register polling and toggle bits * Ready/Busy output pin * Erase Suspend and Resume modes * Read and Program another block during Erase Suspend * Unlock Bypass Program command * Faster Production/Batch Programming * Temporary Block Unprotection mode * Low power consumption * Standby and Automatic Standby * 100,000 Program/Erase cycles per block * 20 years data retention * Defectivity below 1 ppm/year * Electronic Signature * Manufacturer code: 0020h * Bottom Device code: M29F200BB: 00D4h * ECOPACK® packages available

M29F200BB70N6T中文资料参数规格
技术参数

位数 8, 16

存取时间Max 70 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

引脚数 48

封装 SOP

外形尺寸

封装 SOP

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

数据手册

M29F200BB70N6T引脚图与封装图
M29F200BB70N6T引脚图
M29F200BB70N6T封装图
M29F200BB70N6T封装焊盘图
在线购买M29F200BB70N6T
型号: M29F200BB70N6T
制造商: Micron 镁光
描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8Bit/16Bit 70ns 48Pin TSOP T/R

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