开关模式功率肖特基整流器 SWITCHMODE Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL94, VO at 1/8″
• Electrically Isolated. No Isolation Hardware Required.
• UL Recognized File #E69369
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams approximately
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20200
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MBRF20200CT ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MBRF20200CTG 安森美 | 类似代替 | MBRF20200CT和MBRF20200CTG的区别 |