24和40瓦的峰值功率齐纳瞬态电压抑制器 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Features
• Pb−Free Packages are Available
• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V to 26 V
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
• Peak Power − 24 or 40 Watts @ 1.0 ms Unidirectional, per Figure 5 Waveform
• ESD Rating of Class N exceeding 16 kV per the Human Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 A
• Flammability Rating UL 94 V−O
额定电压DC 15.0 V
额定功率 40.0 W
耗散功率 300 mW
钳位电压 21 V
测试电流 1 mA
最大反向击穿电压 15.75 V
脉冲峰值功率 40 W
最小反向击穿电压 14.25 V
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温 -55℃ ~ 150℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
制造应用 通用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBZ15VALT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBZ15VALT1G 安森美 | 完全替代 | MMBZ15VALT3G和MMBZ15VALT1G的区别 |
SZMMBZ15VALT3G 安森美 | 完全替代 | MMBZ15VALT3G和SZMMBZ15VALT3G的区别 |
MMBZ15VDLT1G 安森美 | 类似代替 | MMBZ15VALT3G和MMBZ15VDLT1G的区别 |