MMBZ20VALT3G

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MMBZ20VALT3G概述

24和40瓦的峰值功率齐纳瞬态电压抑制器 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Features

• Pb−Free Packages are Available

• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

• Working Peak Reverse Voltage Range − 3 V to 26 V

• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V

• Peak Power − 24 or 40 Watts @ 1.0 ms Unidirectional, per Figure 5 Waveform

• ESD Rating of Class N exceeding 16 kV per the Human Body Model

• Maximum Clamping Voltage @ Peak Pulse Current

• Low Leakage < 5.0 A

• Flammability Rating UL 94 V−O

MMBZ20VALT3G中文资料参数规格
技术参数

额定电压DC 20.0 V

额定功率 40.0 W

脉冲峰值功率 40 W

最小反向击穿电压 19 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

制造应用 通用

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买MMBZ20VALT3G
型号: MMBZ20VALT3G
描述:24和40瓦的峰值功率齐纳瞬态电压抑制器 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
替代型号MMBZ20VALT3G
型号/品牌 代替类型 替代型号对比

MMBZ20VALT3G

ON Semiconductor 安森美

当前型号

当前型号

MMBZ20VALT1G

安森美

完全替代

MMBZ20VALT3G和MMBZ20VALT1G的区别

SZMMBZ20VALT3G

安森美

类似代替

MMBZ20VALT3G和SZMMBZ20VALT3G的区别

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