MA2J11600L

•用于一般用途的硅外延平面型•允许高密度安装•软恢复特性：trr = 100纳秒

反向电压VrReverse Voltage| 40V \---|--- 平均整流电流IoAverage Rectified Current| 100mA/0.1A 最大正向压降VFForward VoltageVf | 1.2V 反向恢复时间TrrReverse Recovery Time| 100ns 最大耗散功率PdPower Dissipation| Description & Applications| Silicon epitAxiAl plAnAr type For generAl purpose FeAtures • Allowing high-density mounting • Soft recoVery chArActeristic: trr= 100 ns 描述与应用| •用于一般用途的硅外延平面型 •允许高密度安装 •软恢复特性：trr = 100纳秒

得捷:
DIODE GP 40V 100MA SMINI2-F1

Win Source:
DIODE GEN PURP 40V 100MA SMINI2