MA2S10100L

•硅外延平面型带开关•高击穿电压 VR =250V •小端子容•适用于高密度安装

反向电压VrReverse Voltage| 250V \---|--- 平均整流电流IoAverage Rectified Current| 100mA/0.1A 最大正向压降VFForward VoltageVf | 1.2V 反向恢复时间TrrReverse Recovery Time| 60ns 最大耗散功率PdPower Dissipation| Description & Applications| • Silicon epitAxiAl plAnAr type For switching circuits • High breAkdown VoltAge VR = 250V • SmAll terminAl cApAcitAnce • SuitAble High-density mounting 描述与应用| •硅外延平面型带开关 •高击穿电压 VR =250V •小端子容 •适用于高密度安装

得捷:
DIODE GP 250V 100MA SSMINI2-F1

Win Source:
DIODE GEN 250V 100MA SSMINI2