•肖特基势垒二极管(SBD)•硅外延平面型•超高速开关电路•小电流整流•S-迷你型2引脚封装,允许高密度安装•允许下,以纠正(IF(AV)=100 mA时)条件•最适用于高频整流,快速反向恢复时间。•..
反向电压VrReverse Voltage| 50V \---|--- 平均整流电流IoAVerage Rectified Current| 100mA/0.1A 最大正向压降VFForward VoltageVf | 550mV/0.55V 最大耗散功率PdPower dissipation| Description & Applications| • Schottky Barrier Diodes SBD • Silicon epitaxial planar type • For super-high speed switching circuit • For small current rectification • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under IFAV= 100 mA condition • Optimum for high-frequency rectification because of its shortreverse recovery time trr • Low VF forward rise voltage, with high rectification efficiency • Reverse voltage VR DC value = 50 V guaranteed 描述与应用| •肖特基势垒(SBD) •硅外延平面型 •超高速开关电路 •小电流整流 •S-迷你型2引脚封装,允许高密度安装 •允许下,以纠正(IF(AV)=100 mA时)条件 •最适用于高频整流,快速反向恢复时间。 •低VF(正向电压上升),整流效率高 •反向电压VR(DC值)=50 V